IRG-2 has established the controlled tip-based absorption (writing) and desorption (deleting) of hydrogen on C/Si/Ge/Sn graphene materials at atomic length scales.
This allows new explorations on the effect of spatial patterns on a 2D material on the electronic transport properties in an ultraclean environment.
This methodology will enable the creation of efficient nanoelectronic and spintronic devices via controllable chemical functionalization.
