High conductivity and efficient charge injection into organic layers could lead to the design of more efficient organic solar cells and molecular electronics, especially light emitting diodes. Most organic materials are however insulators and only few exhibit high conducting properties.
Ferroelectric materials are characterized by a spontaneous polarization that can be switched by external electric field. This property is important for various technological applications such ferroelectric random access memories.
One factor limiting the scaling and reproducibility of device elements in computer processors is the random distribution of dopants in semiconductor nanostructures. To overcome this obstacle for faster computing, new ways to position and address individual dopants are needed. Proposals for next-generation computing based on quantum
Scientists researching electronic devices that promise to extend current technologies beyond the ITRS roadmap – the industry generated timeline for the development of silicon-based
