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Highlights

Highlights

Atom probe tomography (right) provides three-dimensional maps of the positions of atoms comprising a material. Each dot in the right hand image is a captured and identified atom of a semiconductor.
Atom probe tomography (right) provides three-dimensional maps of the positions of atoms comprising a material. Each dot in the right hand image is a captured and identified atom of a semiconductor.
May 13, 2016
University of Wisconsin - Madison

Full Circle of Innovation in Instrumentation: Atomic Level Imaging

Susan E. Babcock, Thomas F. Kuech, University of Wisconsin-Madison
A MRSEC innovation comes back home to reveal the atomic structure of new materials
Efficient and uniform doping of zinc oxide nanocrystals via plasma synthesis
Efficient and uniform doping of zinc oxide nanocrystals via plasma synthesis
May 5, 2016
University of Minnesota - Twin Cities

Efficient and uniform doping of zinc oxide nanocrystals via plasma synthesis

Eray Aydil, Uwe Kortshagen, Andre Mkhoyan
In solution-based synthesis, often doping efficiencies are low and dopants are excluded from the nanocrystals’ central cores. The research team developed a fundamentally different plasma-based process for synthesizing aluminum-doped zinc oxide nanocrystals.
Understanding the transport of electrons in films of touching nanocrystals is of central importance for their future use in printed electronic devices such as light emitting diodes, solar cells, or transistors. The research team developed a new theory that describes the transition of the electron conduction in doped nanocrystal films from a semiconducting to a metallic behavior.
Understanding the transport of electrons in films of touching nanocrystals is of central importance for their future use in printed electronic devices such as light emitting diodes, solar cells, or transistors. The research team developed a new theory that describes the transition of the electron conduction in doped nanocrystal films from a semiconducting to a metallic behavior.
May 4, 2016
University of Minnesota - Twin Cities

How many electrons make a nanocrystal film metallic?

Uwe Kortshagen, Boris Shklovskii (IRG-2)
Understanding the transport of electrons in films of touching nanocrystals is of central importance for their future use in printed electronic devices such as light emitting diodes, solar cells, or transistors. The research team developed a new theory that describes the transition of the electron conduction in doped nanocrystal films from a semiconducting to a metallic behavior.
Apr 28, 2016
University of Utah

Terahertz Conductivity Measurements of the High Electron Density at the Interface Between Complex Oxides Berardi Sensale-Rodriguez and Ajay Nahata

Berardi Sensale-Rodriguez and Ajay Nahata, University of Utah Dept. of Computer and Electric Engineering
Objective:  Explore the potential for obtaining very high electron concentrations at the interface between two complex oxides and examine its relevance for terahertz (THz) applications.
Pulse Inverse Spin-Hall Effect in Organic Semiconductors
Pulse Inverse Spin-Hall Effect in Organic Semiconductors
Apr 28, 2016
University of Utah

Pulse Inverse Spin-Hall Effect in Organic Semiconductors

Christoph Boehme and Z. Valy Vardeny, University of Utah, Dept. of Physics and Astronomy
Objective: Estimate spin-orbit coupling in in a wide variety of organic semiconductors. 
Apr 28, 2016
University of Utah

Presenting Undergraduate Research at the National Level

Chelsey Short, University of Utah MRSEC
Objective: Train Utah MRSEC students to effectively present materials research.
Apr 26, 2016
Ohio State University

Choreographing a Whirling Dervish

Y.-S. Ou, Y.-H. Chiu, M. Sheffield, M. Chilcote, E. Johnston-Halperin (Ohio State), P. Odenthal, R. K. Kawakami (UCR/Ohio State), N. J. Harmon, M. E. Flatté (U Iowa),Phys. Rev. Lett. 116, 107201 (2016)
How spinning electrons communicate across interfaces  
Apr 26, 2016
Ohio State University

Tip-based functionalization of Group IV graphenes

J. Gupta, R. Kawakami, E. Johnston-Halperin, & W. Windl, The Ohio State University
IRG-2 has established the controlled tip-based absorption (writing) and desorption (deleting) of hydrogen on C/Si/Ge/Sn graphene materials at atomic length scales. This allows new explorations on the effect of spatial patterns on a 2D material on the electronic transport properties in an ultraclean environment.
Apr 26, 2016
Colorado School of Mines

The Materials Genome Gets Hot!

V. Stevanovic, R. O’Hayre, A. Zakutayev REMRSEC, NSF DMR-0820518
The goal of this seed project is to bring first-principles theory closer to experimental reality by accounting for the finite temperature effects that are essential for describing the behavior of “real-world” materials at their typical operating conditions.
Apr 26, 2016
Colorado School of Mines

Synthesis of Si Clathrate using Si nanoparticles

Lakshmi Krishna, Carolyn Koh, Reuben Collins, Craig Taylor Renewable Energy REMRSEC,  NSF DMR-0820518

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