Objective: Train Utah MRSEC students to effectively present materials research.

How spinning electrons communicate across interfaces  

IRG-2 has established the controlled tip-based absorption (writing) and desorption (deleting) of hydrogen on C/Si/Ge/Sn graphene materials at atomic length scales. This allows new explorations on the effect of spatial patterns on a 2D material on the electronic transport properties in an ultraclean environment.

The goal of this seed project is to bring first-principles theory closer to experimental reality by accounting for the finite temperature effects that are essential for describing the behavior of “real-world” materials at their typical operating conditions.

Antiferromagnets are magnetically ordered materials which lack the net magnetization known for ferromagnets. In an antiferromagnet, spins arrange in opposing sublattices with mutually compensating magnetization. Not unlike ferromagnets, antiferromagnets can have domains. In a simple case, the domains are differentiated through spin reversal. Identifying a specific antiferromagnetic domain is a notoriously difficult experimental problem.

Held for the first time on March 16, 2016, on the University of Nebraska-Lincoln (UNL) campus, Science Slams is a new signature activity for the Nebraska MRSEC education and outreach program, and a first-of-its-kind event in the United States. The goal of Science Slams is to encourage undergraduate and graduate students to widen their focus beyond the results of their immediate research, making these results understandable and meaningful to a broad audience in a concise and engaging way.

Molecular ferroelectrics have the potential to become viable material alternatives to inorganic ferroelectrics. Unlike traditional oxide ferroelectrics, molecular ferroelectrics are structurally flexible, can be engineered at the molecular level, and can be assembled on nearly any surface, including flexible sheets and fabrics. The application of molecular ferroelectrics hinges, however, on the availability of strategies to fabricate thin films with defined structure and morphology on a large scale, which at the same time preserve their ferroelectric properties.