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Tip-based functionalization of Group IV graphenes

IRG-2 has established the controlled tip-based absorption (writing) and desorption (deleting) of hydrogen on C/Si/Ge/Sn graphene materials at atomic length scales.

This allows new explorations on the effect of spatial patterns on a 2D material on the electronic transport properties in an ultraclean environment.

This methodology will enable the creation of efficient nanoelectronic and spintronic devices via controllable chemical functionalization.

Tip-based functionalization of Group IV graphenes