The ability to modify the electronic structure and properties of graphene is an important step towards the large scale fabrication of electronic devices based on graphene technology.
The ability to modify the electronic structure and properties of graphene is an important step towards the large scale fabrication of electronic devices based on graphene technology.
Chemically-etched SrTiO3 is widely used as a clean, atomically-smooth template for epitaxical growth of most complex oxides. Since native point defects in these materials are electrically-active and mobile, there is a need to lower their density.
Graphene (2-D carbon) is being considered for spintronics due to its low spin-orbit coupling. While graphene-based devices are being made one-at-a-time successfully, there is a need for a high-throughput fabrication method.
Self-Assembled Nanoscale Dielectric (SAND) thin films are emerging as leading contenders in applications for organic and hybrid thin film transistors, allowing for low operating voltages and ideal device characteristics in next-generation flexible electronics.Â’ Dielectric properties are highly dependent on the behavior of the counter-anions within the film, specifically their pos
The plasmonic properties of noble metal nanoparticles have potential uses in a wide variety of technologies based on their optical response.Â’ Recent collaborative efforts of the NU-MRSEC demonstrate that correlated localized surface plasmon resonance (LSPR) spectroscopy and high-resolution transmission electron microscopy (HRTEM) measurements can be used to obtain the optical res
To advance the application of organic molecular films in solar cells, PCCM researchers have improved their conductivity and carrier injection by n-doping the acceptor layer in a donor-acceptor cell. The acceptor was a fullerene layer, C60, while the dopant was the low-ionization-energy molecule decamethylcobaltocene (CoCp2*).
