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Highlights

Highlights

Apr 24, 2007
UChicago Materials Research Center (2014)

Spin-Blockade in a Colloidal CdSe Quantum Dot Solid
A University of Chicago MRSEC team led by Philippe Guyot-Sionnest and Woowon Kang have been investigating the transport properties of colloidal quantum dots under magnetic field [1].
Apr 13, 2007
Carnegie Mellon University MRSEC (2005)

Changing Complexions of Grain Boundaries
Martin P. Harmer and Shen J. Dillon, Lehigh University Supported by the MRSEC Program of the NSF under award number DMR-0520425
Apr 13, 2007
Carnegie Mellon University MRSEC (2005)

Microstructural Statistics in Solid Oxide Fuel Cell Electrodes
G. Rohrer and P. Salvador/CMU MRSEC, Carnegie Mellon University, NSF DMR- 0520425 L. Wilson and C. Johnson/National Energy Technology Laboratory
Apr 11, 2007
Cornell Center for Materials Research (2017)

Switchable Molecules for the World's Smallest Switch
Apr 11, 2007
Cornell Center for Materials Research (2017)

Beating the World's Smallest Drum
Apr 10, 2007
Cornell Center for Materials Research (2017)

JumpStart helps Small Businesses Solve Technical Problems
Mar 27, 2007
Center for Materials for Information Technology (2002)

Fabrication of a prototype confined current path, current perpendicular to the plane magnetoresistive device (CCP-CPP GMR) for materials science studies
Schematic of the spin transport device. The large arrows show the configuration of the magnetic electrodes. The small arrows show the electron spins in the semiconductor. The electron spins can be read out using an ordinary voltmeter (V), or with an optical Kerr microscope (shown focusing on the device).
Schematic of the spin transport device. The large arrows show the configuration of the magnetic electrodes. The small arrows show the electron spins in the semiconductor. The electron spins can be read out using an ordinary voltmeter (V), or with an optical Kerr microscope (shown focusing on the device).
Mar 15, 2007
UMN Materials Research Science and Engineering Center (2014)

Electrical Detection of Spin Transport in Semiconductors
In semiconductor spintronics, the spin of the electron carries information for both storage and data processing. To some extent, the electron spin can be viewed as a miniature bar magnet that interacts with a magnetic field inside the semiconductor. The orientation of the bar magnet acts as a "bit" of information. Many laboratory demonstrations of spintronics have relied on sophisticated optical techniques for reading out the spin state of electrons.
Figure 1. (Upper left) Architecture of the ion gel gated OTFT employing poly 3-hexylthiophene (P3HT) as the semiconductor and an ion gel as the high capacitance gate dielectric. (Upper right) Structure of the ionic liquid and block copolymer used to form the ion gel. (Bottom) Transient response of the OTFT to a stepped voltage input (VIN 0 to - 3V). When VD is -1V (blue trace), VOUT (blue) is 0 to -1 V. When VD is 0 V, VOUT is not modulated, as expected. Importantly, the period of the input signal is 2 ms, and the operating voltages are low.
Figure 1. (Upper left) Architecture of the ion gel gated OTFT employing poly 3-hexylthiophene (P3HT) as the semiconductor and an ion gel as the high capacitance gate dielectric. (Upper right) Structure of the ionic liquid and block copolymer used to form the ion gel. (Bottom) Transient response of the OTFT to a stepped voltage input (VIN 0 to - 3V). When VD is -1V (blue trace), VOUT (blue) is 0 to -1 V. When VD is 0 V, VOUT is not modulated, as expected. Importantly, the period of the input signal is 2 ms, and the operating voltages are low.
Mar 15, 2007
UMN Materials Research Science and Engineering Center (2014)

Ion Gel-Gated Polymer Thin Film Transistors
A major goal of organic electronics is the development of new kinds of solution processable organic dielectric materials that can serve as gate insulators in organic thin film transistors (OTFTs).
Feb 8, 2007
Wisconsin Materials Research Science and Engineering Center

Materials Stiffer Than Diamond

T. Jaglinski, D. Kochmann, D. Stone and R.S. Lakes
For hardness and stiffness, it's long been thought that nothing beats diamond. But Roderic Lakes and Don Stone, from the University of Wisconsin MRSEC and their colleagues have made a material that is almost ten times stiffer, by embedding small particles of barium titanate in a matrix of tin.

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