Ferroelectric materials are characterized by a spontaneous polarization that can be switched by external electric field. This property is important for various technological applications such ferroelectric random access memories.
Ferroelectric materials are characterized by a spontaneous polarization that can be switched by external electric field. This property is important for various technological applications such ferroelectric random access memories.
One factor limiting the scaling and reproducibility of device elements in computer processors is the random distribution of dopants in semiconductor nanostructures. To overcome this obstacle for faster computing, new ways to position and address individual dopants are needed. Proposals for next-generation computing based on quantum
Scientists researching electronic devices that promise to extend current technologies beyond the ITRS roadmap – the industry generated timeline for the development of silicon-based
When an object, such as a colloidal particle, is put into a liquid crystal, it alters the otherwise uniform orientation of the molecules, creating a field of orientational disturbance around itself.