Objective: Explore the potential for obtaining very
high electron concentrations at the interface between two complex oxides and
examine its relevance for terahertz (THz) applications.
Approach: Study
the THz transmittance as a function of temperature through multiple samples.
Correlate the THz conductivity with DC measurements.
Results and Significance: The results show a large
room temperature THz
conductivity that is 3-6 times larger than measured using DC measurements. The measured THz conductivity in these
samples are similar to that of high-mobility semiconductors and CVD graphene,
making complex oxide materials well suited for THz device applications.
