Amorphous metal oxides (AMOs) have been a potential key channel-layer material in the fabrication of thin film transistors for future electronic applications. This work particularly focuses on the thermal stability of In2O3 based thin films. Hence, a series of In-X-O thin films has been deposited by pulsed laser deposition (PLD). “X” (Sn, Zn, and Ga) is the doping element to In2O3, and each dopant has four atomic percentage: 5%, 10%, 20% and 30%. In situ grazing incidence wide angle X-ray scattering (GIWAXS) technique and level-set simulation have been employed to characterize and model their amorphous to crystalline transition.
