We developed a low-pressure magnetron sputtering technique together with the linear dynamic deposition method and successfully fabricated a new type of magnetic tunneling junctions (MTJs) with (001) textured MgO barrier.
Background: The JHU MRSEC conducts extensive K-12 educational outreach programs aimed at promoting interest in and awareness of the importance of modern materials research.
Magnetic thin films with perpendicular magnetic anisotropy (PMA) have special attributes for explorations and perpendicular magnetic recording. We have observed three hitherto unknown new features in materials with PMA: 1. Asymmetrical domain nucleation centers that produce domains for only one magnetization direction (Fig. 1).
Electric-field tunable spin valves are being investigated
Piezoeletric materials are used for a variety of actuator and sensor applications. Finding a Pb-free replacement for the popular Pb(Zr,Ti)O3 has been a major challenge for the community.