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Highlights

Highlights

Apr 13, 2007
Carnegie Mellon University

Microstructural Statistics in Solid Oxide Fuel Cell Electrodes

G. Rohrer and P. Salvador/CMU MRSEC, Carnegie Mellon University, NSF DMR- 0520425 L. Wilson and C. Johnson/National Energy Technology Laboratory
Apr 11, 2007
Cornell University

Switchable Molecules for the World's Smallest Switch

Apr 11, 2007
Cornell University

Beating the World's Smallest Drum

Apr 10, 2007
Cornell University

JumpStart helps Small Businesses Solve Technical Problems

Mar 27, 2007
The University of Alabama

Fabrication of a prototype confined current path, current perpendicular to the plane magnetoresistive device (CCP-CPP GMR) for materials science studies

Schematic of the spin transport device. The large arrows show the configuration of the magnetic electrodes. The small arrows show the electron spins in the semiconductor. The electron spins can be read out using an ordinary voltmeter (V), or with an optical Kerr microscope (shown focusing on the device).
Schematic of the spin transport device. The large arrows show the configuration of the magnetic electrodes. The small arrows show the electron spins in the semiconductor. The electron spins can be read out using an ordinary voltmeter (V), or with an optical Kerr microscope (shown focusing on the device).
Mar 15, 2007
University of Minnesota - Twin Cities

Electrical Detection of Spin Transport in Semiconductors

In semiconductor spintronics, the spin of the electron carries information for both storage and data processing. To some extent, the electron spin can be viewed as a miniature bar magnet that interacts with a magnetic field inside the semiconductor. The orientation of the bar magnet acts as a "bit" of information. Many laboratory demonstrations of spintronics have relied on sophisticated optical techniques for reading out the spin state of electrons.
Figure 1. (Upper left) Architecture of the ion gel gated OTFT employing poly 3-hexylthiophene (P3HT) as the semiconductor and an ion gel as the high capacitance gate dielectric. (Upper right) Structure of the ionic liquid and block copolymer used to form the ion gel. (Bottom) Transient response of the OTFT to a stepped voltage input (VIN 0 to - 3V). When VD is -1V (blue trace), VOUT (blue) is 0 to -1 V. When VD is 0 V, VOUT is not modulated, as expected. Importantly, the period of the input signal is 2 ms, and the operating voltages are low.
Figure 1. (Upper left) Architecture of the ion gel gated OTFT employing poly 3-hexylthiophene (P3HT) as the semiconductor and an ion gel as the high capacitance gate dielectric. (Upper right) Structure of the ionic liquid and block copolymer used to form the ion gel. (Bottom) Transient response of the OTFT to a stepped voltage input (VIN 0 to - 3V). When VD is -1V (blue trace), VOUT (blue) is 0 to -1 V. When VD is 0 V, VOUT is not modulated, as expected. Importantly, the period of the input signal is 2 ms, and the operating voltages are low.
Mar 15, 2007
University of Minnesota - Twin Cities

Ion Gel-Gated Polymer Thin Film Transistors

A major goal of organic electronics is the development of new kinds of solution processable organic dielectric materials that can serve as gate insulators in organic thin film transistors (OTFTs).
Feb 8, 2007
University of Wisconsin - Madison

Materials Stiffer Than Diamond

T. Jaglinski, D. Kochmann, D. Stone and R.S. Lakes
For hardness and stiffness, it's long been thought that nothing beats diamond. But Roderic Lakes and Don Stone, from the University of Wisconsin MRSEC and their colleagues have made a material that is almost ten times stiffer, by embedding small particles of barium titanate in a matrix of tin.
Feb 8, 2007
Princeton University

New Superconductor Found by Sprinkling Cu Atoms

Feb 8, 2007
Princeton University

Industry/International: Nanowire Grids Polarize Ultraviolet Light

The increased speed and power of microelectronic devices has come from a steady reduction in the size of their constituent features, which has been achieved by using progressively shorter wavelengths for the photolithography used in their fabrication. Today, the most advanced production photolithography uses 193 nm ultraviolet (UV) light from an ArF excimer laser.

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