Diana E. Proffit1, Thomas Philippe1, Jonathan D. Emery1, Qing Ma2, D. Bruce Buchholz1, Peter W. Voorhees1, Michael J. Bedzyk1, Robert P.H. Chang1, Thomas O. Mason1
1Northwestern University Materials Research Science & Engineering Center
2DND-CAT, Northwestern Synchrotron Research Center at Advanced Photon
The crystallization process of amorphous
ZITO thin films was studied using x-ray
diffraction. The resulting intensity peaks
can be fit to a classical Johnson-Mehl-
Avrami-Kolmorgrov relation for the
volume fraction of crystal as a function of
time, modified for the constant heating
rate of the experiments. The good fit
yields a higher activation energy than
other amorphous semiconductors and
implies that ZITO may be a good
replacement for indium tin oxide in
applications where the stability of the
amorphous phase is important.
Integrated intensity of the amorphous peak as
a function of temperature under a constant
heating rate of 0.5 C/min. The solid line is the
fit to the theory.