Transistors, the building blocks of all computer technologies, are currently based on semi-conductors such as silicon, manufactured using energy-intensive processes. Materials that can be processed into electronic devices using cheaper and less energy-intensive methods are of high interest for a number of applications. In work recently performed in IRG-1, UMN MRSEC researchers have demonstrated landmark performance in transistors based on the widely studied transparent semiconductor indium oxide, fabricated via solution processing. Solution processing is a low temperature, low cost approach (in this case essentially a form of inkjet printing), but was shown here to be capable, in conjunction with cutting-edge electrolyte dielectrics, of voltage-induced metallic behavior at interfaces. This metallic conductivity is important, as it maximizes current output, improving device performance and applicability.
