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Parameter Space for Amorphous Oxide Semiconductors (AOSs)

The combined results of controlled synthesis, ab-initio molecular-dynamics liquid-quench simulations, thorough structure and property characterization, and accurate density-functional calculations helped identify four major components that govern the electrical, optical, thermal, and mechanical properties of prototype In-based AOSs: (i) deposition temperature; (ii) oxygen stoichiometry; (iii) cation composition; and (iv) lattice strain, Figure.
Microscopic understanding gained within the unified framework, serves as a solid foundation for optimizing the properties of known AOSs and for further development and exploration of complex ternary and quaternary AOSs.

Advanced Electronic Materials (2017).