Discovery: We
have observed a large inverse spin-Hall effect (ISHE) in ZnO
films grown using Pulsed Laser Deposition. This discovery provides an entirely
new means of measuring spin currents in semiconductors.
Approach:
Developed a novel device concept for the injection and detection of
spin-polarized carriers.
Results
and Significance: First electrically detected measurement
of the ISHE response in ZnO. The results illustrate the potential of ZnO in
future spintronic devices, creating a path for achieving next-generation
all-electrical transparent spintronic devices.
