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Narrow Gap Semiconductor Structures for Electronic Device Applications

The explosion of interest in graphene, a single layer of carbon atoms, has called
attention to the advantages of materials with small effective masses. In our InSb quantum
wells, the electron effective mass is as small as in graphene while the room-temperature
mobility (~40,000 cm2/Vs) is more than a factor of two larger. We are studying electronic device applications that exploit high mobility. These include traditional devices (field-effect transistors, magnetic field sensors) and devices that take advantage of quantummechanical or spin-orbit effects. We are also exploring the properties of holes in InSb quantum wells, which are predicted to have stronger spin-orbit effects than electrons and would be required for CMOS logic applications.
Download: 2007-ou-ua-mrsec-0520550-insb