Harnessing moiré ferroelectricity to modulate light emission from a semiconductor monolayer
- A heterostructure consisting of a twisted hBN substrate and a semiconductor functional layer has been built, combining the properties of the two components
- Twisted hBN substrates leads to ferroelectric domains due to inversion symmetry breaking at the interface; the electrostatic potential on the top surface may be used to modify properties of an adjacent layer
- In the plane electric field at the domain walls separate the electron-hole pair and induces Stark shifted excitons
- A global gate can erase and restore ferroelectric domains, leading to hysteresis and switching in light emission.
- A demonstration of using remote moiré potential to modulate a functional layer, a key goal of the IRG 2
