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Formation of Large Area Aligned Arrays of Semiconducting Carbon Nanotubes

Creating
aligned
arrays of high purity
(>99.9%) semiconducting single-walled carbon nanotubes (s-SWCNTs)
over
a large area has
been a significant challenge in materials synthesis. Towards
this goal,
IRG2
have
recently developed a novel yet simple method to deposit aligned s-SWCNTs on
substrates via dose-controlled,
floating evaporative self-assembly.  The diffusion
of organic solvent at the water-air interface results
in the deposition aligned s-SWCNTs
on a partially submerged hydrophobic substrate, which is withdrawn vertically
from the surface of water, hence gaining complete control over where the
stripes are deposited and the quantity of s-SWCNTs deposited.
Polarized Raman
studies have shown that the s-SWCNTs are aligned within ±14º, are packed at a
density of 50 s-SWCNTs µm-1.

The
result is the rapid deposition of s-SWCNTs into aligned arrays that can be
adapted for scalable integration into a wide variety of microelectronic applications.
Already
field-effect
transistor (FET) devices show high performance with a mobility of 38 cm2
V-1
s-1
and on-off ratio of 2.2 × 106
at a channel length of 9 μm.