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CRISP – National Laboratory Collaborations: Advanced Photon Source & Brookhaven National Laboratory

A multi-partner collaborative effort has focused on understanding semiconductor-oxide interfaces.  This involves atomic layer precision in synthesis of the structures, correlating the structure and electronic properties using first principles, and obtaining subatomic resolution of structures from synchrotron x-ray diffraction a the Advanced Photon Source (Argonne National Laboratory) and electron micrsocopy (Brookhaven National Laboratory).  The outcomes of these studies are critical for the design of ferroelectric field effect transistors.