Control of Spin-Orbit Splitting in 2D Semiconductors
*S. Ulstrup et al. “Spatially Resolved Electronic Properties of Single-Layer WS2 on Transition Metal Oxides.” ACS Nano, 10, 11 (2016).
J. Katoch et al. “Giant spin-splitting and gap renormalization driven by trions in single-layer WS2/h-BN heterostructures.” arXiv:1705.04866.
- Postdoctoral researcher Jyoti Katoch leads IRG-2 efforts using angle-resolved photoemission spectroscopy (ARPES) at the Advanced Light Source to investigate electronic band structures of novel 2D materials and heterostructures.
- Discovered the ability to tune the valence band spin-orbit splitting of monolayer WS2, a 2D semiconductor, using electron doping by potassium adatoms.
- Ultrasharp ARPES spectra* are obtained when 2D materials are placed on flat h-BN flakes instead of oxide substrates.