Atomic force micrograph of a single-layer MoS2
flake connected to four electrodes. The
black arrows highlight a grain boundary.(Right) Current-voltage curve that shows switching between two
Memristors are promising circuit elements for
post-silicon logic circuits, nonvolatile random access memories, and
field-programmable arrays. In this work, a
novel three-terminal memristive
device is demonstrated based on grain boundaries in single-layer MoS2.
high switching ratios that are suitable for conventional electronic memory
architectures. In addition, due to the
atomically thin nature of single-layer MoS2, the memristor
characteristics can be widely tuned with a gate electrode, which facilitates
their implementation in more complex electronic circuits and systems including
(i.e., brain-like) computing.