(Left) Atomic force micrograph of a single-layer MoS2 flake connected to four electrodes. The black arrows highlight a grain boundary.(Right) Current-voltage curve that shows switching between two conductance states.
Memristors are promising circuit elements for post-silicon logic circuits, nonvolatile random access memories, and field-programmable arrays. In this work, a novel three-terminal memristive device is demonstrated based on grain boundaries in single-layer MoS2. These MoS2 memristors show high switching ratios that are suitable for conventional electronic memory architectures. In addition, due to the atomically thin nature of single-layer MoS2, the memristor characteristics can be widely tuned with a gate electrode, which facilitates their implementation in more complex electronic circuits and systems including low-power neuromorphic (i.e., brain-like) computing.
