Bi2Se3 Growth on (001) GaAs Substrates for Terahertz Integrated Systems
- This work demonstrates that the TI vdW material Bi2Se3 can be grown as a single-crystalline single-orientation film on semiconductor substrates with appropriate substrate pre-treatment conditions.
- Understanding how to grow smooth, single-orientation Bi2Se3 films on technologically relevant III−V materials and understanding the chemical nature of the interface between them is critical for the creation of a THz integrated system design.
- This work involved contributions by more than 10 graduate students and advisors in 4 different groups. All these groups are involved in IRG2 of the UD MRSEC. This IRG provided the opportunity for us to collaborate and finish this work together.
