Researchers in the Irvine and Talapin groups at the University of Chicago MRSEC used nanoparticle membranes discovered by the Jaeger and Lin groups to develop a platform for studies of homo= and heteroepitaxy in nanocrystal assemblies.

In collaboration with the group of Scott Crooker at Los Alamos National Lab and Greg Haugstad of the CSE Characterization Facility, graduate student Palak Ambwani and faculty member Chris Leighton have recently reported a remarkable finding in the area of complex oxides.

Spin crossover molecules form a vast class of materials for which the magnetic structure can be altered at the atomic level by an external stimulus. Diamagnetic low spin to paramagnetic high spin transitions can be induced by pressure, temperature, illumination with light, or magnetic pulses.

The University of Nebraska-Lincoln (UNL) leads a new $7 million research collaboration involving six universities to develop a new generation of electronic devices in partnership with an industry consortium.

Roughness insensitive boundary magnetization is a new concept discovered by Nebraska MRSEC researchers. It is a unique feature of magnetoelectric antiferromagnets, i.e. materials in which the application of electric field induces a net magnetic moment. An important property of the boundary magnetization is that it can be switched between two states by applying an electrical voltage.

The University of Nebraska held its fifth Conference for Undergraduate Women in Physical Sciences on October 24-26, 2013 under the scientific theme “Nano Trek.”

The Nebraska MRSEC Professor/Student Pairs Program brings in a professor and a student from non-research intensive four-year institutions to conduct research with Nebraska MRSEC scientists. The goal is to offer a research experience which benefits both the participants and the MRSEC projects.

Graphene is a two-dimensional material that consists of carbon atoms arranged in a hexagonal lattice. Graphene has a very high electronic conductivity that could be tuned by external electric field.