• Amorphous oxide semiconductors (AOS) provide superior performance and lower cost for next generation displays. However, instability under illumination remains a critical issue.
• In this work, the photoconductivity decay was investigated to deduce deep trap density.
• Traditional multi-exponential model is shown to fail in light of short time scales (days) in relation to natural time scales (months)
• Instead, stretched exponential (SE) model is shown to accurately predict correct long term photoresponse with significantly shorter measurement duration.
• Trap density as function of O2 doping is studied
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Northwestern Materials Research Science and Engineering Center
NU-MRSEC advances world-class materials research, education, and outreach via active interdisciplinary collaborations within the Center and with external partners in academia, industry, national laboratories, and museums, both domestically and abroad.