Electric-field tunable spin valves are being investigated
Exchange bias at ferromagnet/multiferroic interfaces has been studied for various thin film and bulk multiferroics including BiFeO3, TbMnO3, LuMnO3, and Cr2O3. Tunable spin valve structures are being explored. Magnetoresistance devices using BiFeO3 as the exchange biasing layer have been demonstrated.
Copyright (2007) University of Maryland, College Park. All rights reserved. Permission to redistribute the contents without alteration is granted to educational institutions for non-profit administrative or educational purposes with proper citation of the literature reference and with credit given to the NSF-MRSEC at the University of Maryland, College Park as the source.
UMD Materials Research Science and Engineering Center (2005)
The Maryland MRSEC carries out nationally recognized fundamental research on surfaces and interfaces of materials with potential impact on the next generation of opto- and nano-electronic devices, and on complex oxides with potential applications in memory, switches, and sensors.