We demonstrate a route to high quality interfaces between IV-VI PbSnSe and conventional III-V semiconductors, offering means to host and manipulate electronic states that arise at this interface. We can now clarify the extent to which topological protection from backscattering persist in systems at relevant length scales for logic and interconnects using these novel materials.

Heterostructures between IV-VI and III-V materials may enable mid-infrared on-chip environmental and biological sensing.