- This work demonstrates that the TI vdW material Bi2Se3 can be grown as a single-crystalline single-orientation film on semiconductor substrates with appropriate substrate pre-treatment conditions.
- Understanding how to grow smooth, single-orientation Bi2Se3 films on technologically relevant III−V materials and understanding the chemical nature of the interface between them is critical for the creation of a THz integrated system design.
- This work involved contributions by more than 10 graduate students and advisors in 4 different groups. All these groups are involved in IRG2 of the UD MRSEC. This IRG provided the opportunity for us to collaborate and finish this work together.
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Center for Hybrid, Active, and Responsive Materials
UD CHARM advances foundational understanding of new materials driven by theoretical and computational predictions paired with cutting-edge experiments to enable the integration of unconventional, ultra-small, building blocks.