Skip to content Skip to navigation
IRG II

Polarization-Enabled Electronic Phenomena

The IRG is aimed at exploring and exploiting ferroelectric (FE) polarization as a state variable that allows realization of polarization-controlled electronic, transport, and other functional properties of oxide, organic, and hybrid FE-based structures. This involves ferroelectrically induced resistive switching phenomena and the associated memristive behavior, FE modulation of electronic confinement at the hybrid FE/semiconductor and organic interfaces, as well as development of novel functional systems based on newly synthesized organic ferroelectrics where molecular interactions are responsible for macroscopic dipole ordering. These scientifically rich problems comprise the involvement of multiple degrees of freedom, the critical role of interfaces, and the interplay between physical and chemical properties at the nanoscale. They require comprehensive fundamental understanding and hold a lot of promise for technological innovations, including new paradigms for data storage and conceptually novel photovoltaic applications.