IRGs

The unifying theme of the Magnetic Heterostructures group (IRG 3) is to achieve a thorough understanding of spin transport, magnetization dynamics, and exchange coupling in materials with precisely defined and well-characterized interfaces, including those with tailored interfacial disorder. Magnetism is the basis for many present, near term, and future technologies, including magnetic read heads and media for hard drives, next-generation memory systems such as magnetic RAM (MRAM), giant magnetoresistance RAM (GMRAM) and spin dependent tunneling (SDT) memory, and prospective computer architectures based on spintronics. Progress in advanced magnetics technology and spintronics is predicated on a fundamental understanding of spin physics and a thorough elucidation of the influence of dimensionality, defects, and band structure on spin/magnetization dynamics. Specifically, the roles of nanoscale interface structure and defects in spin injection, spin lifetimes, magnetization reversal dynamics, and exchange coupling must be firmly established. Further advances in this regard can only be achieved through collaborative efforts that blend the synthesis and characterization of novel materials and interfaces, the design of new magnetic probes with both spatial and temporal resolution, and the use of theories targeted at interfacial phenomena. We will build on both our previous collaborative efforts and our expertise in these critical areas to achieve a comprehensive understanding of (i) interfacial spin transport, (ii) magnetization dynamics, and (iii) exchange coupling in magnetic heterostructures, all with well-defined and well-characterized interfaces. These three thrusts, which overlap strongly with respect to the choice of materials and underlying spin/magnetization physics, will provide the much-needed insight into the quantum and statistical mechanics of magnetism required for progress in magnetism-based applications. Our efforts necessarily will span a broad range of materials, including epitaxially grown metals, semiconductors and oxides, ferromagnet/semiconductor heterostructures and bilayers, and nanoparticle arrays. The IRG will capitalize on its established expertise in the synthesis of precisely engineered materials and interfaces, unique characterization tools, techniques that probe magnetization reversal and exchange coupling with an unprecedented degree of precision, and first principles calculations of electronic, magnetic and structural properties.