IRGs

This IRG focuses on the science and engineering of magnetoelectronics. The interplay of materials, nanostructures, and architectures that are essential for spintronics research necessitates interdisciplinary collaborations between researchers with complementary expertise. Nanostructures are a key component since the characteristic lengths for spintronic effects are typically one to few tens of nanometers. Indeed, controlling architecture within the nanostructure is essential for capturing new effects and realizing devices are based on the interplay between materials. The fabrication of new nanostructures requires an array of expertise and resources both in conventional thin film fabrication and processing, as well as in more specialized techniques such as soft-lithography and self-assembly.

Spin transport in nanostructures can be realized in vertical structures (e.g., CPP GMR and MTJs) with the current perpendicular to the interfaces, or in lateral structures through spin interconnects. New architectures for spintronics include nanorings, ultrathin lines spanning ferromagnetic contacts, and thickness-modulated half-metallic ferromagnets. Many of these issues are relevant to new and emerging technologies in spintronic devices, including magnetic random access memory, magnetic field sensors, and printable spin electronics. We have identified key scientific and engineering challenges that confront magnetoelectronics and have conceived new directions for exploration. All of these challenges and ideas address the common theme of spin-polarized transport in materials within nanostructures