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X-ray Scattering Study of Thermally-Induced Amorphous-to-Crystalline Transition for In-X-O Films

Schematic of GIWAXS measurement.

Schematic of GIWAXS measurement.

Crystallization temperatures of In-X-O thin films

Crystallization temperatures of In-X-O thin films

Amorphous
metal oxides
(AMOs) have been a potential key channel-layer material in the fabrication of thin film
transistors for future
electronic applications.
This work particularly focuses on the thermal stability of In2O3 based thin films. Hence, a series of
In-X-O thin films has been deposited by pulsed laser deposition (PLD). “X” (Sn, Zn, and
Ga) is the
doping element to In2O3, and each dopant has four atomic
percentage: 5%, 10%, 20% and 30%. In situ grazing incidence wide angle X-ray scattering
(GIWAXS) technique and level-set simulation have been employed to characterize
and model their amorphous to crystalline transition.