New Material Developed for Post Si-CMOS Electronics @ Georgia Institute of Technology

Author(s): Dr. Edward Conrad, School of Physics, Georgia Tech

• Multiple Dirac Cones from a 10-layer graphene film
• This Undoped Dirac Cone shows that multilayer graphene grown on the carbon face of SiC is "effectively" an electronic single graphene sheet
• This new material, discovered at the GT MRSEC for new electronic materials, makes an all graphene electronics circuit possible